bipolarics, inc. part number BPT1419B08 silicon microwave power transistor product data sheet features: ? class c characteristics ? high output power 8.0 w typ.@ 1.35-1.85 ghz ? gold metallization beo packaging for low thermal resistance performance d ata: electrical characteristics (t a = 25 o c) v ebo emitter-base voltage 4.0 v i c collector current (instantaneous) 2.0 a t j (1) junction temperature 200 o c t stg storage temperature -65 to 150 o c absolute maximum ratings: symbol parameters rating units v cbo collector-base voltage 50 v symbol parameters & conditions unit min. typ. max. v ce =15v, i c = 200 ma, class a, unless stated (1) depends on package emitter-base breakdown voltage i e = 5 ma, i c = 0 v 3.5 5 description and applications: bipolarics' BPT1419B08 is a high performance common base rf power transistor intended for 22v operation across the 1.35 to 1.85 ghz frequency band. rated at 8 watts minimum output power, it may be used for both cw and pep applications. bv cbo collector-base break down voltage i c = 5 ma, v be = 0 v v 50 bv ebo g pe gain f = 1.35 - 1.85 ghz, v cc = 22 v, p out = 8 w db 6.0 c collector efficiency f = 1.35 - 1.85 ghz, v cc = 22 v, p out = 8 w % 40 50 h fe dc current gain i c = 1a, v ce = 5v 100 f t cut off frequency ghz 6.0 p out output power w 8 i cbo collector current v cb = 28v, i e = 0 a 2 load mismatch v cc = 22 v i e = 2.0 a, f = 1.35 - 1.85 ghz 5:1 p out = 8 w
page 2 product data sheet bipolarics, inc. part number BPT1419B08 silicon microwave power transistor y c n e u q e r fe c r u o s zd a o l z z h grx jrx j 5 3 . 18 . 3 10 . 4 1 -2 . 40 . 0 5 . 12 . 1 18 . 2 1 -6 . 55 . 0 7 . 17 . 0 14 . 8 -0 . 65 . 1 - 5 8 . 10 . 0 23 . 9 -2 . 41 . 2 -
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